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| (R) STPS60L45CW LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) Tj (max) VRRM VF(max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE DESCRIPTION Dual center tap schottky barrier rectifier suited for 5V output in off line AC/DC power supplies. Packaged in TO-247, this device is intended for use in low voltage, high frequency converters, free wheeling and polarity protection applications. 2 x 30 A 150C 45 V 0.50 V A1 K A2 A2 K A1 TO-247 ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature (*) Tc = 135C = 0.5 Per diode Per device Value 45 50 30 60 600 2 4 - 65 to + 150 150 10000 Unit V A A A A A C C V/s tp = 10 ms Sinusoidal tp = 2 s square F=1kHz tp = 100 s square Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj March 1999 - Ed: 2C 1/4 STPS60L45CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Parameter Per diode Total Coupling Value 0.75 0.42 0.1 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0073 IF2(RMS) IF = 30 A IF = 30 A IF = 60 A IF = 60 A 0.64 0.44 VR = 45 V 175 Min. Typ. Max. 1.5 350 0.55 0.5 0.73 0.72 V Unit mA VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (=0.5, per diode). 22 20 18 16 14 12 10 8 6 4 2 0 PF(av)(W) = 0.1 = 0.05 = 0.2 = 0.5 =1 35 30 25 20 15 T IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15C/W 10 tp T IF(av) (A) =tp/T 5 =tp/T tp Tamb(C) 50 75 100 125 150 0 5 10 15 20 25 30 35 40 0 0 25 2/4 STPS60L45CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration. IM(A) 400 350 300 250 200 150 100 50 0 1E-3 IM t Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 Tc=75C Tc=125C = 0.5 Tc=25C = 0.2 = 0.1 T 0.2 Single pulse =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-3 1E-2 0.0 1E-4 =tp/T tp 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(mA) 1E+3 Tj=150C C(nF) 10.0 Tj=125C Tj=100C F=1MHz Tj=25C 1E+2 1E+1 1.0 1E+0 1E-1 1E-2 0 5 10 15 Tj=25C VR(V) 20 25 30 35 40 45 0.1 VR(V) 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (per diode). IFM(A) 200 100 Maximum values Tj=125C Typical values Tj=150C 10 Maximum values Tj=100C Maximum values Tj=25C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS60L45CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Min. Typ. Max. Min. Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139 Weight 4.36 g Base qty 30 Type Marking Package TO-247 Delivery mode Tube STPS60L45CW STPS60L45CW Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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